to-2 52 -2l plastic-encapsulate mosfets cj u 02n60 n-channel power mosfet general description the high voltage mosfet uses an advanced termination scheme to provide enhanced voltage-blocki ng capability without degrading performance over time. in addition , this advanced mosfet is designed to withstand high energy in avalanche and commutation modes . the new energy efficient design also offe rs a drain-to-source diode with a fast recovery time. designed for high voltage, high speed switching applications in power suppliers, c onverters and pwm motor controls , these devices are pa rticularly well suited for bridge circuits where diode speed and commutating safe operati ng areas are critical and offer additional and safety margin against unexpected voltage transients. features z robust high voltage termination z avalanche energy specified z source-to-drain diode recovery time compar able to a discrete fast recovery diode z diode is characterized fo r use in bridge circuits z i dss and v ds(on) specified at elevated temperature maximum ratings (t a =25 unless otherwise noted) paramete r s y mbol v alue un i t drain-source voltage v ds 600 gate-source voltage v gs 20 v continuous drain current i d 2 pulsed drain current i dm 8 a power dissipation p d 1.2 5 w w w single pulsed avalanche energy* e as 128 mj thermal resistance from junction to ambient r ja 100 /w junction temperature t j 150 storage temperature t stg -50 ~+150 *e as condition: t j =25 ,v dd = 5 0v, l= 64 mh,i as =2a,r g =25 ? to-2 52 -2l 1. gate 2. drain 3. source 1 of 3 sales@zpsemi.com www.zpsemi.com cj u 02n60 f,mar,2014
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit drain-source breakdown voltage v (br) dss v gs = 0v, i d =250a 600 gate-threshold voltage (note1) v gs(th) v ds =v gs , i d =250a 2.0 4.0 v gate-body leakage current (note1) i gss v ds =0v, v gs =20v 100 na zero gate voltage drain current i dss v ds =600v, v gs =0v 25 a drain-source on-state resistance (note1) r ds(on) v gs =10v, i d =1a 4.4 ? forward transconductance (note1) g fs v ds =50v, i d =1a 1 s input capacitance c iss 435 output capacitance c oss 56 reverse transfer capacitance c rss v ds =25v,v gs =0v, f =1mhz 9.2 pf turn-on delay time t d (on) 12 rise time t r 21 turn-off delay time t d(off) 30 fall time t f v dd =300v, i d =2a, v gs =10v,r g =18 ? 24 n s forward on voltage(note1) v sd v gs =0v, i s =2a 1.6 v notes: 1. pulse test : pulse width 300s, duty cycle 2 %. 2. these parameters have no way to verify. (note2) (note2) (note2) (note2) (note2) (note2) (note2) 2 of 3 sales@zpsemi.com www.zpsemi.com cj u 02n60 f,mar,2014
0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 01234567 0.0 0.5 1.0 12345 0 2 4 6 8 10 0.0 0.4 0.8 1.2 1.6 2.0 1e-3 0.01 0.1 1 24681012 0 5 10 15 20 25 30 25 50 75 100 125 0 1 2 3 4 5 pulsed v gs =5.5v v gs = 6v 8v 10v v gs =5v output characteristics v gs =4.5v drain current i d (a) drain to source voltage v ds (v) v ds =10v pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) t a =100 t a =25 4 0.1 t a =25 pulsed on-resistance r ds(on) ( ) drain current i d (a) i d ?? r ds(on) v gs =10v pulsed source current i s (a) source to drain voltage v sd (v) v sd i s ?? t a =100 t a =25 pulsed i d =1a on-resistance r ds(on) ( ) gate to source voltage v gs (v) v gs ?? r ds(on) t a =100 t a =25 i d =250ua threshold voltage threshold voltage v th (v) junction temperature t j ( ) 3 of 3 sales@zpsemi.com www.zpsemi.com cj u 02n60
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